Part Number Hot Search : 
H66T68 GDZJ11B SST214 F060256 SMCJ100A 520E940C 2SC49 GDZJ11B
Product Description
Full Text Search
 

To Download 18N65 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  unisonic technologies co., ltd 18N65 power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2013 unisonic technologies co., ltd qw-r502-771.d 18a, 650v n-channel power mosfet ? description the utc 18N65 uses utc?s advanced proprietary, planar stripe, dmos technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) 0.5 ? @v gs = 10 v * ultra low gate charge ( typical 50nc ) * low reverse transfer capacitance ( c rss = typical 23pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 1.gate 3.source 2.drain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 18N65l-t3p-t 18N65g-t3p-t to-3p g d s tube 18N65l-t47-t 18N65g-t47-t to-247 g d s tube 18N65l-tc3-t 18N65g-tc3-t to-230 g d s tube
18N65 power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-771.d ? absolute maximum ratings (t c =25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 650 v gate-source voltage v gss 30 v continuous drain current i d 18 a pulsed drain current i dm 45 a avalanche current i ar 18 a avalanche energy single pulsed e as 1000 (note 2) mj repetitive e ar 30 peak diode recovery dv/dt dv/dt 10 v/ns power dissipation to-3p p d 390 w to-247 357 w to-230 360 w junction temperature t j 150 storage temperature t stg -55 ~ +150 note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. l=6.18mh, i as =18a, v dd =50v, r g =25 ? , starting t j =25 ? thermal data parameter symbol ratings unit junction to ambient to-3p ja 30 /w to-247 40 /w to-230 62.5 /w junction to case to-3p jc 0.32 /w to-247 0.35 /w to-230 0.5 /w
18N65 power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-771.d ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 650 v drain-source leakage current i dss v ds =650v, v gs =0v 25 a gate-body leakage current i gss v ds =0v, v gs =30v 100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-resistance r ds ( on ) v gs =10v, i d =9a (note) 0.36 0.5 ? dynamic parameters input capacitance c iss v ds =25v, v gs =0v, f=1mhz 2500 pf output capacitance c oss 280 pf reverse transfer capacitance c rss 23 pf switching parameters turn-on delay time t d ( on ) v gs =10v, v ds =0.5v dss , i d =18a, r g =5 ? (external) 21 ns turn-on rise time t r 60 ns turn-off delay time t d ( off ) 62 ns turn-off fall-time t f 60 ns total gate charge q g v gs =10v, v ds =0.8v dss , i d =18a 50 nc gate source charge q gs 15 nc gate drain charge q gd 18 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd i f =i s ,v gs =0v (note ) 1.5 v maximum continuous drain-source diode forward current i s v gs =0v 18 a maximum pulsed drain-source diode forward current i sm repetitive 54 a reverse recovery time t r r v gs =0v, di f /dt=100a/s, i s =18a, v r =100v 200 ns reverse recovery charge q rr 0.8 c note: pulse test: pulse width 300s, duty cycle 2%.
18N65 power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-771.d ? typical characteristics 200 0 0 4 drain current vs. source to drain voltage drain current,i d (a) source to drain voltage,v sd (mv) 800 400 600 12 16 3 12 0 0 4 8 10 drain-source on-state resistance characteristics drain current, i d (a) drain to source voltage, v ds (v) 2 2 1 6 4 v gs =10v, i d =9.0a 8 20 24 1000 1 drain current vs. gate threshold voltage drain current,i d ( a) gate threshold voltage,v th (v) drain current vs. drain-source breakdown voltage 0 0 50 drain current,i d (a) drain-source breakdown voltage,bv dss (v) 600 250 200 100 150 200 300 400 800 350 400 24 3 1000 0 250 100 150 200 300 50 0 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


▲Up To Search▲   

 
Price & Availability of 18N65

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X